Singapore, July 27, 2022 – Micron Technology, Inc. (Nasdaq: MU), today announced that it has begun volume production of the world’s first 232-layer NAND, built with industry-leading innovations to drive unprecedented performance for storage solutions. It features the industry’s highest areal density and delivers higher…
Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences
Singapore, July 30, 2021 — Micron Technology, Inc., (Nasdaq: MU) announced today it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Engineered for high-end and flagship phones, Micron’s discrete UFS 3.1 mobile NAND unlocks 5G’s potential…
Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry’s First 176-Layer NAND and 1-Alpha DRAM
Computex, TAIPEI, Taiwan, June 2, 2021 – Micron Technology, Inc. (Nasdaq: MU), today unveiled memory and storage innovations across its portfolio based on its industry-leading 176layer NAND and 1α (1-alpha) DRAM technology, as well as the industry’s first Universal Flash…
Micron Ships World’s First 176-Layer NAND, Delivering A Breakthrough in Flash Memory Performance and Density
BOISE, Idaho, Nov. 9, 2020 — Micron Technology, Inc. (Nasdaq: MU), today announced shipment of the world’s first 176-layer 3D NAND flash memory, achieving unprecedented, industry-pioneering density and performance. Together, Micron’s new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in…
Samsung Electronics Brings Multi-terabyte Storage Capacities at Accessible Prices with 860 QVO SSD
860 QVO SSD combines high capacity with fast performance and trusted reliability to reach a broader consumer market Singapore – Nov. 28, 2018 – Samsung Electronics Co., Ltd has today unveiled its new consumer solid state drive (SSD) — the…
1Tbit in each chip! – Intel and Micron announces new 3D NAND QLC Flash Memory
As memory technology advances with research and development, consumers can be expecting better value from memory products in the near future. Intel and Micron has formally announced the release of the new QLC NAND flash memory, which utilizes a 2nd…
Plextor Combines Streamlined Speed and Aesthetics – the Debut of the High-Texture M8Se NVMe SSD
Plextor Combines Streamlined Speed and Aesthetics – the Debut of the High-Texture M8Se NVMe SSD Plextor M8Se NVMe SSD wins iF Design Award 2017 Professional Fluid Mechanics Heat Sink Design with Integrated NVMe Ultra-high Transmission Support Plextor, the leading global…
A look at NVMe storage technology with Plextor M8Pe SSD
A look at NVMe storage technology with Plextor M8Pe SSD Storage Technologies In the recent years, there have been great improvement and development made in PC secondary memory technology. While slower Hard Disk Drives are still filling a gap in…
Intel and Micron Produce Breakthrough Memory Technology
Intel and Micron Produce Breakthrough Memory Technology New Class of Memory Unleashes the Performance of PCs, Data Centers and More NEWS HIGHLIGHTS · Intel and Micron begin production on new class of non-volatile memory, creating the first new memory category in…
Toshiba considers acquisition of OCZ Consumer SSD. Will be a win-win deal for both companies.
Previously, OCZ was troubled for the high failure rates of their SSD, insufficient supply of NAND chips and inability to submit their financial reports. These are some of the problems that have always been plagueing the company. Although the final…
Toshiba, SanDisk to build about $4 billion flash memory plant: Nikkei
(Reuters) – Toshiba Corp plans to build a memory chip production factory with a total investment of 400 billion yen (about $4 billion USD) with SanDisk Corp (SNDK.O), the Nikkei reported. Toshiba plans to make chips of 16-17 nanometers circuit…